Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

ELECTRON - PHONON SCATTERING IN Si DOPED GaN

Phonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long t...

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Magnetic order in lightly doped La2-xSrxCuO4.

We study long wavelength magnetic excitations in lightly doped La2-xSrxCuO4 (x</=0.03) detwinned crystals. The lowest energy magnetic anisotropy induced gap can be understood in terms of the antisymmetric spin interaction inside the antiferromagnetic (AF) phase. The second magnetic resonance, analyzed in terms of in-plane spin anisotropy, shows unconventional behavior within the AF state; it le...

Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of polycrystalline-Si thin-film transistors

Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of poly-Si TFT have been studied. For a LDD implantation dose of 2–4 × 1013 cm−2, no significantly large difference in on-state current and off-state leakage is found. For a LDD implantation energy of 50–100 keV, however, the higher LDD implantation energy results in smaller off-state leakage and more re...

The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: [email protected] (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the elec...